DocumentCode
3557021
Title
Poly emitter bipolar hot carrier effects in an advanced BiCMOS technology
Author
Joshi, S.P. ; Lahri, R. ; Lage, C.
Author_Institution
Fairchild Semiconductor, Puyallup, WA
Volume
33
fYear
1987
fDate
1987
Firstpage
182
Lastpage
185
Abstract
Hot carrier effects due to reverse biasing of emitter-base junction in a poly emitter bipolar transistor are discussed. Degradation of transistor current gain under DC, pulsed DC and AC stress conditions is found to be determined by the total injected charge through the reverse biased junction. These results coupled with the design simulations are used to predict the reliability of bipolar devices in a BiCMOS circuit.
Keywords
BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Degradation; Hot carrier effects; Hot carriers; Inverters; Stress; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191382
Filename
1487340
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