Title :
Poly emitter bipolar hot carrier effects in an advanced BiCMOS technology
Author :
Joshi, S.P. ; Lahri, R. ; Lage, C.
Author_Institution :
Fairchild Semiconductor, Puyallup, WA
Abstract :
Hot carrier effects due to reverse biasing of emitter-base junction in a poly emitter bipolar transistor are discussed. Degradation of transistor current gain under DC, pulsed DC and AC stress conditions is found to be determined by the total injected charge through the reverse biased junction. These results coupled with the design simulations are used to predict the reliability of bipolar devices in a BiCMOS circuit.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Degradation; Hot carrier effects; Hot carriers; Inverters; Stress; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191382
