• DocumentCode
    3557023
  • Title

    A high current gain Si HBT with a hydrogenated micro-crystalline Si emitter

  • Author

    Fujioka, Hirosi ; Ri, Seigen ; Takasaki, Kanetake ; Fujino, Katsuhiro ; Ban, Yasutak

  • Author_Institution
    Fujitsu Limited, Kawasaki, Japan
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    190
  • Lastpage
    193
  • Abstract
    An npn Si HBT has been fabricated using hydrogenated micro-crystalline Si as a wide gap emitter with low resistivity, and has showed much higher common emitter current gain than a conventional homo-junction transistor. Measured common emitter current gains of the fabricated HBT´s having sub-emitter base sheet resistances of 14 kΩ/□ and 95Ω/□ are 1500 and 18 respectively. The maximum current gain is obtained at a collector current of as high as 3×104A/cm2.
  • Keywords
    Conductivity; Doping; Fabrication; Heterojunction bipolar transistors; Optical films; Photonic band gap; Plasma applications; Plasma temperature; Radio access networks; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191384
  • Filename
    1487342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557023