• DocumentCode
    3557024
  • Title

    A novel ion-implanted amorphous silicon programmable element

  • Author

    Shacham-Diamand, Yosi ; Sinar, Alex ; Sirkin, E. ; Blech, Illan ; Gerzberg, Levy

  • Author_Institution
    Technion-Israel Institute of Technology, Haifa, Israel
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    194
  • Lastpage
    197
  • Abstract
    A novel Ion-Implanted Programmable Element (IPEL) suitable for integration with VLSI technology has been developed. The device operation is based on the electrical properties of a metal/amorphous silicon/single crystal silicon structure made by heavy-dose ion-implantation into a contact to a single crystal silicon. The initial resistance of the amorphous silicon is very high (> 1015Ω×cm) and is dielectric strength is in the 1 MV/cm range. Its resistance drops over 6 orders of magnitude after switching and the device is transformed irreversibely into its conductive state.
  • Keywords
    Amorphous materials; Amorphous silicon; Chemical technology; Conducting materials; Crystalline materials; Implants; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191385
  • Filename
    1487343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557024