Title :
A novel ion-implanted amorphous silicon programmable element
Author :
Shacham-Diamand, Yosi ; Sinar, Alex ; Sirkin, E. ; Blech, Illan ; Gerzberg, Levy
Author_Institution :
Technion-Israel Institute of Technology, Haifa, Israel
Abstract :
A novel Ion-Implanted Programmable Element (IPEL) suitable for integration with VLSI technology has been developed. The device operation is based on the electrical properties of a metal/amorphous silicon/single crystal silicon structure made by heavy-dose ion-implantation into a contact to a single crystal silicon. The initial resistance of the amorphous silicon is very high (> 1015Ω×cm) and is dielectric strength is in the 1 MV/cm range. Its resistance drops over 6 orders of magnitude after switching and the device is transformed irreversibely into its conductive state.
Keywords :
Amorphous materials; Amorphous silicon; Chemical technology; Conducting materials; Crystalline materials; Implants; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191385
