Title :
High speed modulation and CW operation of AlGaAs/GaAs lasers on Si
Author :
Chen, H.Z. ; Paslaski, J. ; Ghaffari, A. ; Wang, H. ; Morkoç, H. ; Yariv, A.
Author_Institution :
California Institute of Technology, Pasadena, CA
Abstract :
Microwave modulation and CW operation of AlGaAs lasers grown by MBE on Si substrates have been obtained for the first time. Ridge waveguide lasers(10µm×380µm) were modulated with a microwave signal up to 2.5GHz which is notable considering the structure used. Near and far field measurements indicated a single transverse mode and a narrow beam angle (4.8°). Finally, polarization measurements appear to show the solely TE nature of the emission.
Keywords :
Gallium arsenide; Laser modes; Masers; Molecular beam epitaxial growth; Optical materials; Polarization; Semiconductor device measurement; Substrates; Threshold current; Waveguide lasers;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191398
