Title :
GaAs MESFET - IC side-gating effect model
Author :
Ohno, Yasuo ; Goto, Norio
Author_Institution :
NEC Corporation, Kawasaki, Japan
Abstract :
The GaAs MESFET IC side-gating effect is analyzed using Shockley-Read-Hall statistics for deep traps. The effect appears due to the conduction of a negative voltage on n-type electrode to other FETs through semi-insulating substrate and due to dipole layer formation at the channel/substrate interface. The negative voltage conduction mechanism in semi-insulating substrates is clarified and the hole traps role in voltage conduction is confirmed by numerical simulation.
Keywords :
Charge carrier processes; Electron traps; Electrostatics; FETs; Gallium arsenide; Integrated circuit modeling; MESFET integrated circuits; Microelectronics; Substrates; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191402
