• DocumentCode
    3557070
  • Title

    Room temperature dynamic memories for GaAs integrated circuits

  • Author

    Dungan, T.E. ; Cooper, J.A., Jr. ; Melloch, M.R.

  • Author_Institution
    Purdue University, West Lafayette, IN
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    348
  • Lastpage
    351
  • Abstract
    This paper describes PN-junction-based, majority-carrier cells for GaAs dynamic memories. Capacitance recovery measurements on simple test structures indicate room-temperature storage times of 3 minutes and 1.5 hours for cells fabricated in GaAs or Al0.2Ga0.8As, respectively. Punchthrough-isolated and direct-access cell configurations are discussed.
  • Keywords
    Application specific integrated circuits; Capacitance measurement; Gallium arsenide; High speed integrated circuits; MODFET integrated circuits; Material storage; Random access memory; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191428
  • Filename
    1487386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557070