• DocumentCode
    3557093
  • Title

    Effect of channel strain on the electrical characteristics of InGaAs/InAlAs HEMTs

  • Author

    Chan, Y.-J. ; Pavlidis, D. ; Ng, G.I. ; Jaffe, M. ; Singh, J. ; Quillec, M.

  • Author_Institution
    The University of Michigan, Ann Arbor, MI
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    427
  • Lastpage
    430
  • Abstract
    In0.52Al0.48As/In0.53+xGa0.47-xAS HEMTs are studied experimentally and theoretically in order to evaluate the effect of strain introduced in the channel by increased In composition. A tight binding formalism is used in order to model the biaxial compressive strain. The distribution of the charge sheet density in the subbands of the quatum well is evaluated as a function of strain and carrier enhancement is observed primarily in the ground state sub-band. Devices were grown by MBE using the presented design procedure. HEMTs were fabricated using 60% and 65% In composition and the measured intrinsic transconductance is found to increase by 40% (321mS/mm) and 47% (359mS/mm) respectively. Capacitance-voltage and temperature characteristics are presented. First microwave results are also reported.
  • Keywords
    Capacitance-voltage characteristics; Capacitive sensors; Electric variables; HEMTs; Indium compounds; Indium gallium arsenide; Land surface temperature; MODFETs; Stationary state; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191449
  • Filename
    1487407
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557093