DocumentCode
3557102
Title
SOI photodiode array stacked on VDMOS for optical switching
Author
Kioi, Kazumasa ; Miyajima, Toshiaki ; Yoshioka, Minoru ; Doi, Tsukasa ; Koba, Masayoshi
Author_Institution
Sharp Corporation, Nara, Japan
Volume
33
fYear
1987
fDate
1987
Firstpage
460
Lastpage
463
Abstract
This paper describes the first development of the single chip optical switching device for optical coupling MOS relay by SOI technology. The device is constructed with a laser recrystailized SOI layer as a photoelectric element, which is fabricated in the upper layer in the device and shades the power MOSFET fabricated in the lower layer. On illuminating the device, the power MOSFET can be switched on Accordingly, an optical switching MOSFET with the function of a photodiode and a MOSFET is realized as a single chip device.
Keywords
Isolation technology; MOSFET circuits; Optical arrays; Optical coupling; Optical devices; Photodiodes; Power MOSFET; Power generation; Relays; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191458
Filename
1487416
Link To Document