Circuit hot electron effect simulation

Hot electron effects resulting from high electric fields in submicron devices can severely degrade device characteristics. As a result, severe performance degradation can occur at the circuit level. No simulator exists to predict this effect. The purpose of this paper is to present circuit hot electron effect simulation using our recently developed simulator. As a result, a circuit performance degradation due to hot electron can be simulated and the MOSFETs which results in this degradation can be identified.