Title :
Modeling of hot carrier effects based on two-dimensional distribution of electron temperature
Author :
Horiuchi, Tadahiko ; Fukuma, Masao ; Mikoshiba, Hiroaki
Author_Institution :
NEC Corporation, Kanagawa, Japan
Abstract :
A model to predict device lifetime from substrate current is proposed by taking two-dimensional distribution of electron temperature into account. Experimental results can be reproduced by the model under any bias conditions used. Validity of this model is examined by using two-dimensional device simulator which includes energy transport.
Keywords :
Charge carrier processes; Degradation; Electrons; Hot carrier effects; Interface states; MOSFETs; National electric code; Stress; Substrates; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191471
