DocumentCode
3557118
Title
CMOS SRAM alpha particle modelling and experimental results
Author
Voldman, S. ; Corson, P. ; Patrick, L. ; Nguyen, K. ; Gilbert, L. ; Goodwin, R. ; Maffit, T. ; Murphy, S.
Author_Institution
IBM General Technology Division, Essex Junction, Vermont
Volume
33
fYear
1987
fDate
1987
Firstpage
518
Lastpage
521
Abstract
Through the use of device simulation, circuit analysis and experimentation, the alpha particle sensitivities of state-of-the-art CMOS SRAMs have been quantified. Alpha particle immunity exists in these CMOS SRAMs from 64-kb to 1-Mb SRAMs and soft fails can only be produced by significant reduction of the power supply voltage.
Keywords
Alpha particles; Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Monte Carlo methods; Random access memory; Semiconductor device modeling; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191474
Filename
1487432
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