DocumentCode :
3557135
Title :
+ BT Instability in P+poly gate MOS structure
Author :
Hiruta, Y. ; Matsuoka, F. ; Hama, K. ; Iwai, H. ; Maeguchi, K. ; Kanzaki, K.
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
578
Lastpage :
581
Abstract :
Long term reliability of p+poly gate MOS structure with thin gate oxide was investigated and compared with n+poly gate. Instability in positive low bias temperature (-BT) stress was found out in p+poly gate. Increase of interface states and negative flat band voltage shift were observed after +BT stress test. Increase of interface states does not depend on boron dose into the poly Si gate and phosphorus gettring process, and no interface state generation appears in n+poly gate containing implanted borons. So, the mobile ions and borons are not origin of the interface state generation. Therefore, the only one mechanism, which is not denied, is that holes are injected from p+poly gate into the oxide and generate interface states.
Keywords :
Boron; Capacitance; Frequency; Interface states; MOS capacitors; MOSFET circuits; Stress; Temperature; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191492
Filename :
1487450
Link To Document :
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