DocumentCode :
3557163
Title :
A non-destructive technique for the evaluation of electric field regions in semiconductor devices
Author :
McArthur, Douglas C.
Author_Institution :
North American Philips Corporation, Briarcliff Manor, New York
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
682
Lastpage :
685
Abstract :
A flying spot scanner system that produces real time electric field images of semiconductor devices is described. Electric field images of LDMOS transistors are generated by probing the surface of the device with a raster of light and then detecting the resulting photocurrent. This system can be used to optimize design and process parameters of lateral high voltage transistors.
Keywords :
Cathode ray tubes; Focusing; Image storage; Ionization; Optical devices; Photoconductivity; Semiconductor devices; Semiconductor lasers; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191520
Filename :
1487478
Link To Document :
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