DocumentCode
3557163
Title
A non-destructive technique for the evaluation of electric field regions in semiconductor devices
Author
McArthur, Douglas C.
Author_Institution
North American Philips Corporation, Briarcliff Manor, New York
Volume
33
fYear
1987
fDate
1987
Firstpage
682
Lastpage
685
Abstract
A flying spot scanner system that produces real time electric field images of semiconductor devices is described. Electric field images of LDMOS transistors are generated by probing the surface of the device with a raster of light and then detecting the resulting photocurrent. This system can be used to optimize design and process parameters of lateral high voltage transistors.
Keywords
Cathode ray tubes; Focusing; Image storage; Ionization; Optical devices; Photoconductivity; Semiconductor devices; Semiconductor lasers; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191520
Filename
1487478
Link To Document