Title :
Accurate criterion for MOSFET effective gate length extraction using the capacitance method
Author :
Scarpulla, J. ; Mele, T.C. ; Krusius, J.P.
Author_Institution :
Cornell University, Ithaca, NY
Abstract :
The capacitance method for extraction of the effective gate lengths of short channel MOSFETs is shown to be viable. Fine structure exists in the CV curves which provides a fixed reference. A high resolution measurement can detect this fine structure, and the ambiguity in the capacitance technique can be removed. Finite element simulations have been performed to explore the origin of the fine structure.
Keywords :
Capacitance measurement; Doping profiles; Electrodes; Finite element methods; Instruments; Length measurement; MOSFET circuits; Measurement techniques; Performance evaluation; Statistical analysis;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191532
