• DocumentCode
    3557175
  • Title

    Accurate criterion for MOSFET effective gate length extraction using the capacitance method

  • Author

    Scarpulla, J. ; Mele, T.C. ; Krusius, J.P.

  • Author_Institution
    Cornell University, Ithaca, NY
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    722
  • Lastpage
    725
  • Abstract
    The capacitance method for extraction of the effective gate lengths of short channel MOSFETs is shown to be viable. Fine structure exists in the CV curves which provides a fixed reference. A high resolution measurement can detect this fine structure, and the ambiguity in the capacitance technique can be removed. Finite element simulations have been performed to explore the origin of the fine structure.
  • Keywords
    Capacitance measurement; Doping profiles; Electrodes; Finite element methods; Instruments; Length measurement; MOSFET circuits; Measurement techniques; Performance evaluation; Statistical analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191532
  • Filename
    1487490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557175