P-channel Schottky injection field effect transistors

Recent interest in MOS-gated power devices have led to the development of a new family of power transistors. The Schottky INjection Field Effect Transistor (SINFET) and the Hybrid SINFET (HSINFET) have been demonstrated to have very fast switching speed and with current handling capabilities that are comparable to the LIGT. In this paper, the first p-channel implementations of the SINFET and HSINFET devices are described. Design considerations that are unique to the p-type device fabrication are discussed. Experimental results comparing the forward conduction characteristics and the switching speeds of the SINFET, HS N-FET as well as the more conventional p-channel LDMOS and LIGT devices are presented.