GaAs/AlGaAs surface emitting laser diode with vertical distributed feedback optical cavity and transverse junction buried heterostructure

Author

Hsin, Wei ; Ogura, Mutsuo ; Weber, Jean-Pierre ; Wang, Shyh ; Yang, J.J. ; Wu, M.C. ; Shyh Wang ; Whinnery, John R.

Author_Institution

University of California, Berkeley, CA

Volume

33

fYear

1987

fDate

1987

Firstpage

792

Lastpage

795

Abstract

A threshold current of 2 mA at room temperature CW operation is realized in a vertical distributed feedback surface emitting laser diode (VDFB-SELD) with transverse junction buried heterostructure (TJBH). In this TJBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded by N- and P-type AlGaAs cladding layer for minority carrier confinement. The far field angle is 7 to 8 degrees. The beam shape is nearly circular. However, the lasing spectrum is broad ( 1.5 to 3 nm) compared with the conventional edge-emitting laser. Theoretical model of the VDFB-SELD-TJBH by using DFB theory and its computer simulation of the spectrum shows good agreement with the experimental measurements.

Keywords

Carrier confinement; Diode lasers; Distributed feedback devices; Gallium arsenide; Nonhomogeneous media; Optical feedback; Stimulated emission; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1987 International

Type

conf

DOI

10.1109/IEDM.1987.191551

Filename

1487509