• DocumentCode
    3557213
  • Title

    OMCVD Grown InP/InGaAs heterojunction bipolar transistors

  • Author

    Schumacher, H. ; Hayes, J.R. ; Bhat, R. ; Koza, M.

  • Author_Institution
    Bell Communications Research Inc., Red Bank, NJ
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    852
  • Lastpage
    853
  • Keywords
    Application specific integrated circuits; Bipolar integrated circuits; Current density; Detectors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Photonic band gap; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191568
  • Filename
    1487526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557213