DocumentCode

3557225

Title

Ultra-high speed AlInAs-GaInAs HEMT technology

Author

Mishra, U.K. ; Jensen, J.F. ; Brown, A.S. ; Beaubien, R.S. ; Jelloian, L.M.

Author_Institution

Hughes Research Laboratories, Malibu, California

Volume

33

fYear

1987

fDate

1987

Firstpage

879

Lastpage

880

Keywords

Delay; Electron mobility; Epitaxial layers; FETs; HEMTs; Logic devices; Ring oscillators; Substrates; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1987 International

Type

conf

DOI

10.1109/IEDM.1987.191580

Filename

1487538