DocumentCode :
3557232
Title :
Semiconductor lasers with very high quality etched facets
Author :
Behfar-Rad, A. ; Wong, S.S.
Author_Institution :
Cornell University, Ithaca, New York
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
895
Lastpage :
897
Keywords :
Chemical lasers; Etching; Gallium arsenide; Mirrors; Optical buffering; Plasma confinement; Resists; Semiconductor lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191586
Filename :
1487544
Link To Document :
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