DocumentCode
3557232
Title
Semiconductor lasers with very high quality etched facets
Author
Behfar-Rad, A. ; Wong, S.S.
Author_Institution
Cornell University, Ithaca, New York
Volume
33
fYear
1987
fDate
1987
Firstpage
895
Lastpage
897
Keywords
Chemical lasers; Etching; Gallium arsenide; Mirrors; Optical buffering; Plasma confinement; Resists; Semiconductor lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191586
Filename
1487544
Link To Document