Title :
An overview of epitaxial GaAs on Si technology
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
Abstract :
The performance of electronic and optical devices fabricated with GaAs on Si has advanced to the degree that this technology may be considered for device applications. Possible areas range from simply replacing the GaAs substrate with Si to integration of GaAs and Si devices on the same substrate. In this article, the recent advances in this field are reviewed, and the various proposed applications are discussed.
Keywords :
Cutoff frequency; FETs; Gallium arsenide; Integrated circuit technology; MESFETs; MOCVD; Microwave devices; Molecular beam epitaxial growth; Superlattices; Temperature;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191588