DocumentCode :
3557234
Title :
An overview of epitaxial GaAs on Si technology
Author :
Cho, A.Y.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
901
Lastpage :
904
Abstract :
The performance of electronic and optical devices fabricated with GaAs on Si has advanced to the degree that this technology may be considered for device applications. Possible areas range from simply replacing the GaAs substrate with Si to integration of GaAs and Si devices on the same substrate. In this article, the recent advances in this field are reviewed, and the various proposed applications are discussed.
Keywords :
Cutoff frequency; FETs; Gallium arsenide; Integrated circuit technology; MESFETs; MOCVD; Microwave devices; Molecular beam epitaxial growth; Superlattices; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191588
Filename :
1487546
Link To Document :
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