• DocumentCode
    3557389
  • Title

    A scalable trench etch based process for high voltage vertical RESURF MOSFETs

  • Author

    Rochefort, C. ; van Dalen, R.

  • Author_Institution
    Philips Res. Leuven, Belgium
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    35
  • Lastpage
    38
  • Abstract
    In this work, for the first time, vertical RESURF MOSFETs manufactured using a trench etch and vapor phase doping process depict a breakdown voltage above 300V. We prove that this concept is scalable to a much higher breakdown voltage range. The device features a record low specific resistance of 0.98Ωmm2 with a breakdown voltage of 473V. This best result to-date for any superjunction technology proves to be a good alternative to the multi-epitaxy technique commercially in use.
  • Keywords
    etching; high-voltage engineering; p-n junctions; power MOSFET; semiconductor device manufacture; semiconductor doping; 473 V; breakdown voltage; high voltage vertical RESURF MOSFET; high-voltage engineering; p-n junctions; power MOSFET; semiconductor device manufacture; semiconductor doping; superjunction technology; trench etching; vapor phase doping process; Boron; Doping; Etching; Filling; Immune system; MOSFETs; Manufacturing processes; Silicon; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
  • Print_ISBN
    0-7803-8890-9
  • Type

    conf

  • DOI
    10.1109/ISPSD.2005.1487944
  • Filename
    1487944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557389