High performance superjunction UMOSFETs with split p-columns fabricated by multi-ion-implantations

Author

Miura, Yoshinao ; Ninomiya, Hitoshi ; Kobayashi, Kenya

Author_Institution

Div. of Power Manage. Devices, NEC Electron. Corp., Kawasaki, Japan

fYear

2005

fDate

23-26 May 2005

Firstpage

39

Lastpage

42

Abstract

We propose superjunction UMOSFET devices (SJ-UMOS) with split p-column structures for automotive applications with rated voltage of 40-75 V. The split p-column fabricated by multi-ion-implantations consists of p-type islands separated by small distances in an n-type epi-layer. This structure was designed to improve the repetitive inductive switching performance without sacrificing the original benefits of the SJ structure. We achieved a specific on-resistance of 28.7 mΩmm² at a gate voltage of 10 V for breakdown voltage of 68.0 V. In addition, we confirmed high immunity against inductive switching stress at 175°C and good reverse recovery properties.

Keywords

automotive engineering; ion implantation; p-n junctions; power MOSFET; semiconductor process modelling; 10 V; 175 C; 40 to 75 V; 68 V; SJ-UMOS; automotive applications; automotive engineering; high performance superjunction UMOSFET; multi ion implantations; n-type epi-layer; p-n junctions; p-type islands; power MOSFET; repetitive inductive switching; split p-column structures; superjunction UMOSFET devices; Automotive applications; Breakdown voltage; Doping profiles; Energy management; Low voltage; MOSFET circuits; National electric code; Power MOSFET; Shape; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487945

Filename

1487945