Investigations on the ruggedness limit of 6.5 kV IGBT

Author

Bauer, J.G. ; Schilling, O. ; Schaeffer, C. ; Hille, F.

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2005

fDate

23-26 May 2005

Firstpage

71

Lastpage

74

Abstract

The save operating area (SOA) of high voltage 6.5 kV IGBTs has been investigated. The ruggedness of the IGBT with planar cell structure is limited by the hole current density in the cell structure arriving from the avalanche generation under turn-off conditions. The impact of current density, V_cc and vertical IGBT structure on the ruggedness has been taken into account. With a modified cell design the avalanche generation can be reduced significantly. Simulations with a trench IGBT promises additional SOA improvement.

Keywords

current density; hole density; insulated gate bipolar transistors; power field effect transistors; 6.5 kV; avalanche generation; high voltage IGBT; hole current density; hole density; insulated gate bipolar transistors; planar cell structure; power field effect transistors; ruggedness limit; save operating area; vertical IGBT structure; Current density; Current measurement; Density measurement; Insulated gate bipolar transistors; Medical tests; Medium voltage; Numerical simulation; Semiconductor optical amplifiers; Switching loss; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487953

Filename

1487953