DocumentCode
3557406
Title
Hot-carrier reliability of high side NDMOS in smart power SOI technologies
Author
Dietz, Franz ; Schwantes, Stefan ; Stephan, Thilo ; Dudek, Volker
Author_Institution
ATMEL Germany GmbH, Heilbronn, Germany
fYear
2005
fDate
23-26 May 2005
Firstpage
103
Lastpage
106
Abstract
The influence of the stacking potential on the hot-carrier (HC) reliability and safe operational area (SOA) of lateral SOI-NDMOS transistors is investigated for the first time. It is shown by measurements and simulation results that a decrease in the off-state breakdown voltage due to the potential of the wafer backside of NDMOS devices does not necessarily implicate a decrease of the HC reliability while the electrical SOA can be reduced.
Keywords
hot carriers; power MOSFET; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; high side NDMOS; hot-carrier reliability; lateral SOI-NDMOS; off-state breakdown voltage; safe operational area; smart power SOI technologies; stacking potential; wafer backside potential; Breakdown voltage; Degradation; Hot carriers; Isolation technology; MOS devices; Semiconductor optical amplifiers; Stacking; Switches; Variable structure systems; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN
0-7803-8890-9
Type
conf
DOI
10.1109/ISPSD.2005.1487961
Filename
1487961
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