DocumentCode
3557410
Title
Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching
Author
Green, D.W. ; Hardikar, S. ; Sweet, M. ; Vershinin, K.V. ; Narayanan, E. M Sankara
Author_Institution
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
fYear
2005
fDate
23-26 May 2005
Firstpage
119
Lastpage
122
Abstract
Due to the increasing demand for multi-functionality in power integrated circuits, consideration must be given as to how multiple, adjacent, monolithically integrated, high voltage lateral power devices interact with each other when operated independently of one another. For the first time, we demonstrate through extensive experiments and simulations that the breakdown, on-state, switching and safe operating area performance of LIGBT are all significantly affected by the operating conditions of an adjacent LIGBT in junction isolation technology.
Keywords
bipolar integrated circuits; circuit simulation; insulated gate bipolar transistors; isolation technology; monolithic integrated circuits; power integrated circuits; JI-LIGBT; breakdown characteristics; clamped inductive switching; junction isolation technology; lateral power devices; monolithically integrated circuit; on-state characteristic; power integrated circuits; safe operating area performance; switching characteristic; Anodes; Circuit simulation; Current measurement; Electric breakdown; Integrated circuit technology; Isolation technology; Medical simulation; Power integrated circuits; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN
0-7803-8890-9
Type
conf
DOI
10.1109/ISPSD.2005.1487965
Filename
1487965
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