High performance power MOSFETs with strained-Si channel

Author

Cho, Young-Kyun ; Kwon, Sung Ku ; Jung, Hee-Bum ; Kim, Jongdae

Author_Institution

Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejeon, South Korea

fYear

2005

fDate

23-26 May 2005

Firstpage

191

Lastpage

194

Abstract

To improve a current drivability and an on-resistance characteristic of the high voltage MOSFET, we propose a novel power MOSFET employing a strained-Si channel structure. A 20nm thick strained-Si low field channel NMOSFET with a 0.75μm thick Si_0.8Ge_0.2 buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with conventional Si channel high voltage NMOSFET, while suppressing breakdown voltage and subthreshold slope characteristic degradation by 6% and 8% respectively. Also, the strained-Si high voltage NMOSFET improved the transconductance by 28% and 52% at linear and saturation regime.

Keywords

Ge-Si alloys; buffer layers; elemental semiconductors; power MOSFET; silicon; 0.75 micron; 20 nm; Si; Si_0.8Ge_0.2; buffer layer; high voltage MOSFET; high voltage NMOSFET; on-resistance characteristic; power MOSFET; strained-Si channel; transconductance; Breakdown voltage; Buffer layers; Degradation; Doping; Electrons; FETs; Laboratories; MOSFET circuits; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487983

Filename

1487983