DocumentCode
3557447
Title
Trench IGBT behaviour near to latch-up conditions
Author
Müller, Andreas ; Pfirsch, Frank ; Silber, Dieter
Author_Institution
Bremen Univ.
fYear
2005
fDate
23-26 May 2005
Firstpage
255
Lastpage
258
Abstract
Trench IGBTs show very high stability against latching with appropriate layout of the p-body/trench distance. This is in accordance with the simulation results. Simulation of parallel devices resulted in unexpected alternating high current states indicating the possibility of moving filaments as has been reported from dynamic avalanche investigations
Keywords
insulated gate bipolar transistors; semiconductor device breakdown; semiconductor device models; IGBT stability; insulated gate bipolar transistors; latch-up conditions; parallel devices; trench IGBT behaviour; Appropriate technology; Circuit simulation; Current density; Electron mobility; Impact ionization; Insulated gate bipolar transistors; Performance loss; Space charge; Stability; Switching loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-8890-9
Type
conf
DOI
10.1109/ISPSD.2005.1487999
Filename
1487999
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