An experimental analysis of localized lifetime and resistivity control by Helium

Author

Daliento, S. ; Mele, L. ; Spirito, P. ; Gialanella, L. ; Romano, M. ; Limata, B.N. ; Carta, R. ; Bellemo, L.

Author_Institution

Dipt. di Ingegneria Elettronica e delle Telecomimicazioni, Napoli Univ.

fYear

2005

fDate

23-26 May 2005

Firstpage

259

Lastpage

262

Abstract

In this work we present an experimental study on the effects of helium implantation in silicon. Doses in the range 1 times 10¹⁰ - 5 times 10¹¹ atoms/cm² have been analysed. Results show that, increasing the dose, a saturation effect on the minimum lifetime that can be achieved occurs, while a marked effect on the resistivity of the material appears. The temperature dependence of the resistivity show that changes are due to a trap effect related to an energy level in the bandgap placed at Ec-0.23 eV that is the same of the dominant recombination center induced by helium implantation

Keywords

carrier lifetime; electrical resistivity; electron traps; electron-hole recombination; elemental semiconductors; helium; ion implantation; silicon; 0.23 eV; Si; dominant recombination; helium implantation; localized lifetime; resistivity control; saturation effect; temperature dependence; trap effect; Conductivity; Energy states; Helium; Implants; Radiative recombination; Rectifiers; Silicon; Telecommunication control; Temperature dependence; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1488000

Filename

1488000