DocumentCode

3557455

Title

1200 V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances

Author

Kimoto, T. ; Kawano, H. ; Suda, J.

fYear

2005

fDate

23-26 May 2005

Firstpage

279

Lastpage

282

Keywords

Annealing; Avalanche breakdown; Fabrication; Implants; MOSFETs; Oxidation; Rough surfaces; Silicon carbide; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1488005

Filename

1488005