4.5 kV 60A SICGT and its Half Bridge Inverter Operation of 20kVA Class

Author

Sugawara, Y. ; Asano, K. ; Ogata, S. ; Agarwal, A. ; Ryu, S. ; Palmour, J. ; Okada, S. ; Miyanagi, Y.

Author_Institution

Power Eng. R&D Center, Kansai Electr. Power Co., Amagasaki

fYear

2005

fDate

23-26 May 2005

Firstpage

295

Lastpage

298

Abstract

4.5kV 60A SICGT of 6mm times 6mm chip size has been developed, which has the largest electric power handling capability among the reported SiC switching devices. Due to the fast turn-on time of 0.08mus and the fast turn-off time of 2.3mus at 250degC, SICGT can realize a low power loss as compared with 4.5kV Si GTOs and 4.5W Si IGBTs. A PWM half bridge inverter was built by using a couple of SICGT modules. Each module consists of one SICGT and two SiC pn diodes in a TO3 type package. The inverter achieved an output power of 20 kVA at V _DC of 2kV and carrier frequency of 2kHz, This represents the largest output power among the reported SiC inverters

Keywords

PWM invertors; epitaxial growth; power semiconductor diodes; thyristors; 2 kHz; 2 kV; 2.3 mus; 250 C; 4.5 kV; 60 A; PWM half bridge inverter; SICGT modules; SiC pn diodes; SiC switching devices; TO3 type package; electric power handling capability; epitaxial growth; power semiconductor diodes; thyristors; Bridge circuits; Electrodes; Ion implantation; Packaging; Power generation; Pulse width modulation inverters; Silicon carbide; Temperature dependence; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1488009

Filename

1488009