• DocumentCode
    3557463
  • Title

    A Study of MIS - AlGaN/GaN HEMTs with SiO2 Films as Gate Insulator

  • Author

    Sugimoto, M. ; Kodama, M. ; Soejima, N. ; Hayashi, E. ; Uesugi, T. ; Kachi, T.

  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    307
  • Lastpage
    310
  • Keywords
    Aluminum gallium nitride; Capacitance-voltage characteristics; Density measurement; Electrodes; Energy measurement; Gallium nitride; HEMTs; Insulation; Interface states; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
  • Print_ISBN
    0-7803-8890-9
  • Type

    conf

  • DOI
    10.1109/ISPSD.2005.1488012
  • Filename
    1488012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557463