Title :
High current operation of GaN power HEMT
Author :
Ueda, H. ; Sugimoto, M. ; Uesugi, T. ; Fujishima, O. ; Kachi, T.
Keywords :
Chemical vapor deposition; Electric resistance; Electrodes; Electrons; Gallium nitride; HEMTs; MOCVD; Substrates; Thermal resistance; Wiring;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1488013
