Integrated Bi-directional Trench Lateral Power MOSFETs for One Chip Lithium-ion Battery Protection ICs

Author

Lu, D.H. ; Fujishima, N. ; Sugi, A. ; Sugimoto, M. ; Matsunaga, S. ; Sawada, M. ; Iwaya, M. ; Takagiwa, K.

Author_Institution

Device Technol. Lab., Fuji Electr. Adv. Technol. Co., Nagano

fYear

2005

fDate

23-26 May 2005

Firstpage

355

Lastpage

358

Abstract

A low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM) has been integrated with a controller in a 0.6mum BiCDMOS process for single-cell lithium-ion battery protector, downsizing the footprint of the protector in chip-scale package to 3mm ², one-third of its multi-chip counterparts. The first-silicon results of the BTLPM switches demonstrated a breakdown voltage of 22V, a specific on-resistance of 6.8mOmegamm² at a gate voltage of 4V (a gate electrical field of 2.3MV/cm)

Keywords

BiCMOS integrated circuits; power MOSFET; power integrated circuits; protection; secondary cells; semiconductor device breakdown; 0.6 micron; 22 V; 4 V; BTLPM switches; BiCDMOS process; BiCMOS integrated circuits; chip-scale package; controller IC; integrated bi-directional trench lateral power MOSFET; one chip lithium-ion battery protection IC; power integrated circuits; secondary cells; semiconductor device breakdown; single-cell lithium-ion battery protector; Batteries; Bidirectional control; Chip scale packaging; Etching; MOSFETs; Mobile handsets; Protection; Switches; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1488024

Filename

1488024