DocumentCode :
3557516
Title :
Quantum dot intermediate band solar cell material systems with negligible valence band offsets
Author :
Levy, Michael Y. ; Honsberg, Christtiana ; Martí, Antonio ; Luque, Antonio
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
90
Lastpage :
93
Abstract :
In this paper, material triads (quantum-dot/barrier/substrate) are presented that may implement quantum dot intermediate band solar cells with conversion efficiencies greater than 60%. Triads whose barrier material and substrate material are lattice-matched are presented. In addition, triads are presented with the lattice constant of the substrate in-between the lattice constant of the barrier and the lattice constant of the quantum dot. The latter case provides triads that may remove strain during epitaxial growth.
Keywords :
lattice constants; semiconductor quantum dots; solar cells; valence bands; conversion efficiency; epitaxial growth; lattice constant; lattice matching; negligible valence band offset; quantum dot intermediate band solar cell material systems; quantum-dot/barrier/substrate triads; strain removal; Charge carrier processes; Conducting materials; Lattices; Photonic band gap; Photovoltaic cells; Quantum computing; Quantum dots; Stationary state; Substrates; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488076
Filename :
1488076
Link To Document :
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