Title :
Transient capacitance spectroscopy on InAsxP1-x/InP multiquantum well solar cells structures
Author :
Khan, Aurangzeb ; Marupaduga, S. ; Freundlich, A. ; Gou, J. ; Ko, H. ; Alemu, A. ; Williams, L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of South Alabama, Mobile, AL, USA
Abstract :
An investigation of electron/hole emission from chemical beam epitaxy grown InAsxP1-x/InP multiquantum well solar cell structures has been carried out. Detailed analysis of double deep level transient spectroscopy shows that traps E1, E2, E3, and E4 are extended over the whole multiquantum well region including interfaces. The trap E3 exhibits strong field dependence and having large capture cross section, which might act as a strong recombination center. The field dependence of E3, indicates lowering of the emission barrier and an enhancement of the emission rates by the applied electric field.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; deep level transient spectroscopy; deep levels; electron emission; electron traps; electron-hole recombination; hole traps; indium compounds; semiconductor quantum wells; solar cells; InAsP-InP; capture cross section; carrier traps; chemical beam epitaxy grow; double deep level transient spectroscopy; electron/hole emission; emission barrier lowering; emission rate enhancement; multiquantum well solar cells structure; recombination center; transient capacitance spectroscopy; Capacitance; Charge carrier processes; Chemicals; Electron beams; Electron emission; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Photovoltaic cells; Spectroscopy;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488089
