Intentional hydrogen doping of polycrystalline ZnO thin films prepared by MOCVD technique

Author

Myong, Seung Yeop ; Lim, Koeng Su

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

148

Lastpage

151

Abstract

We investigated the role of hydrogen impurities in polycrystalline ZnO incorporated via post-deposition hydrogen exposure. From the room-temperature infrared absorption spectra, photoluminescent spectra, and electrical stability measurements under air atmosphere, we concluded that hydrogen interstitials act as shallow donors and decrease oxygen and Zn vacancies.

Keywords

II-VI semiconductors; MOCVD; hydrogen; impurities; infrared spectra; interstitials; photoluminescence; semiconductor doping; semiconductor thin films; vacancies (crystal); wide band gap semiconductors; zinc compounds; MOCVD technique; Zn vacancy decrease; ZnO:H; air atmosphere; electrical stability measurements; hydrogen impurities; hydrogen interstitials; intentional hydrogen doping; oxygen vacancy decrease; photoluminescent spectra; polycrystalline ZnO thin films; post-deposition hydrogen exposure; room-temperature infrared absorption spectra; shallow donors; Atmospheric measurements; Doping; Electromagnetic wave absorption; Hydrogen; Impurities; Infrared spectra; MOCVD; Stability; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488091

Filename

1488091