Title :
Combinatorial discovery of new thin film photovoltaics
Author :
Haber, Joel A. ; Gerein, Nathan J. ; Hatchard, Timothy D. ; Versavel, Matthieu Y.
Author_Institution :
Dept. of Chem., Alberta Univ., Edmonton, Alta., Canada
Abstract :
A combinatorial approach to discover new types of thin film photovoltaic devices containing only abundant, inexpensive, and relatively nontoxic elements is described. A large number of compound semiconductors with band-gaps suitable for solar energy conversion (1.0-2.0 eV) are known, including many sulfide compounds, but have not yet been used in efficient devices. Thin films of several sulfide semiconductors will be prepared and their microstructure and optical and electrical properties characterized. Combinatorial methods will be employed to simultaneously prepare many combinations of back contacts, absorber layers, buffer layers, heterojunction window layers, and top contacts. The combinatorial approach is necessary, because existing thin film technologies have largely been selected and improved empirically. The combinatorial approach will enable us to greatly accelerate the rate of empirical discovery.
Keywords :
antimony compounds; bismuth compounds; buffer layers; copper compounds; crystal microstructure; electrical contacts; energy gap; lead compounds; photovoltaic effects; semiconductor heterojunctions; semiconductor materials; semiconductor thin films; solar cells; tin compounds; Cu3BiS3; PbSbS; SnSbS; absorber layer; back contact; band gap; buffer layer; combinatorial discovery; compound semiconductor; electrical properties; heterojunction window layer; microstructure; optical properties; solar energy conversion; sulfide compounds; sulfide semiconductors; thin film photovoltaics; thin film technology; top contact; Contacts; Microstructure; Optical buffering; Optical films; Photonic band gap; Photovoltaic cells; Semiconductor thin films; Solar energy; Thin film devices; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488094