DocumentCode
3557534
Title
Amorphous carbon thin film deposition by microwave surface-wave plasma CVD for photovoltaic solar cell
Author
Ume, Masayoshi ; Adhikary, Sunil ; Uchida, Hideo ; Tian, Xuemin ; Ome, Ashraf M M ; Adhikari, Sudip
Author_Institution
Dept. of Electron. & Information Eng., Chubu Univ., Kasugai, Japan
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
163
Lastpage
166
Abstract
Amorphous carbon (a-C) thin films were successfully deposited on various substrates, such as, silicon, quartz, glass and flexible plastic at low temperature (<100°C) by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD), a newly developed deposition method for solar cell application. The camphor dissolved with alcohol mixture and methane were used as carbon precursors, while argon was used as carrier gas. Nitrogen and iodine were used as dopants. The deposited a-C films were characterized by UV/VIS/NIR spectrophotometer, SEM, Raman scattering and XPS measurements. In this paper, we report experimental results of the optical, physical and structural properties of the films; the results suggested that it is possible to control film growth rate and optical band gap, and consequently improve photoconductivity by proper selection of deposition parameters, optimizing dopants and appropriate annealing temperature. Our research work is in a progressive stage to realize cheap, reasonably highly efficient and environmentally friendly a-C-based photovoltaic solar cell in the future.
Keywords
Raman spectra; X-ray photoelectron spectra; amorphous semiconductors; annealing; carbon; elemental semiconductors; energy gap; infrared spectra; iodine; nitrogen; photoconductivity; plasma CVD; scanning electron microscopy; semiconductor doping; semiconductor growth; semiconductor thin films; solar cells; ultraviolet spectra; visible spectra; C:I; C:N; Raman scattering; SEM; Si; SiO2; UV/VIS/NIR spectrophotometer; XPS measurements; alcohol mixture; amorphous carbon thin film deposition; annealing temperature; camphor; carrier gas; deposition parameters; dopants; film growth rate; methane; microwave surface-wave plasma CVD; microwave surface-wave plasma chemical vapor deposition; optical band gap; optical properties; photoconductivity; photovoltaic solar cell; physical properties; solar cell application; structural properties; Amorphous materials; Optical films; Optical scattering; Photovoltaic cells; Photovoltaic systems; Plasma applications; Plasma chemistry; Plasma temperature; Solar power generation; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488096
Filename
1488096
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