• DocumentCode
    3557534
  • Title

    Amorphous carbon thin film deposition by microwave surface-wave plasma CVD for photovoltaic solar cell

  • Author

    Ume, Masayoshi ; Adhikary, Sunil ; Uchida, Hideo ; Tian, Xuemin ; Ome, Ashraf M M ; Adhikari, Sudip

  • Author_Institution
    Dept. of Electron. & Information Eng., Chubu Univ., Kasugai, Japan
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    163
  • Lastpage
    166
  • Abstract
    Amorphous carbon (a-C) thin films were successfully deposited on various substrates, such as, silicon, quartz, glass and flexible plastic at low temperature (<100°C) by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD), a newly developed deposition method for solar cell application. The camphor dissolved with alcohol mixture and methane were used as carbon precursors, while argon was used as carrier gas. Nitrogen and iodine were used as dopants. The deposited a-C films were characterized by UV/VIS/NIR spectrophotometer, SEM, Raman scattering and XPS measurements. In this paper, we report experimental results of the optical, physical and structural properties of the films; the results suggested that it is possible to control film growth rate and optical band gap, and consequently improve photoconductivity by proper selection of deposition parameters, optimizing dopants and appropriate annealing temperature. Our research work is in a progressive stage to realize cheap, reasonably highly efficient and environmentally friendly a-C-based photovoltaic solar cell in the future.
  • Keywords
    Raman spectra; X-ray photoelectron spectra; amorphous semiconductors; annealing; carbon; elemental semiconductors; energy gap; infrared spectra; iodine; nitrogen; photoconductivity; plasma CVD; scanning electron microscopy; semiconductor doping; semiconductor growth; semiconductor thin films; solar cells; ultraviolet spectra; visible spectra; C:I; C:N; Raman scattering; SEM; Si; SiO2; UV/VIS/NIR spectrophotometer; XPS measurements; alcohol mixture; amorphous carbon thin film deposition; annealing temperature; camphor; carrier gas; deposition parameters; dopants; film growth rate; methane; microwave surface-wave plasma CVD; microwave surface-wave plasma chemical vapor deposition; optical band gap; optical properties; photoconductivity; photovoltaic solar cell; physical properties; solar cell application; structural properties; Amorphous materials; Optical films; Optical scattering; Photovoltaic cells; Photovoltaic systems; Plasma applications; Plasma chemistry; Plasma temperature; Solar power generation; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488096
  • Filename
    1488096