DocumentCode :
3557534
Title :
Amorphous carbon thin film deposition by microwave surface-wave plasma CVD for photovoltaic solar cell
Author :
Ume, Masayoshi ; Adhikary, Sunil ; Uchida, Hideo ; Tian, Xuemin ; Ome, Ashraf M M ; Adhikari, Sudip
Author_Institution :
Dept. of Electron. & Information Eng., Chubu Univ., Kasugai, Japan
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
163
Lastpage :
166
Abstract :
Amorphous carbon (a-C) thin films were successfully deposited on various substrates, such as, silicon, quartz, glass and flexible plastic at low temperature (<100°C) by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD), a newly developed deposition method for solar cell application. The camphor dissolved with alcohol mixture and methane were used as carbon precursors, while argon was used as carrier gas. Nitrogen and iodine were used as dopants. The deposited a-C films were characterized by UV/VIS/NIR spectrophotometer, SEM, Raman scattering and XPS measurements. In this paper, we report experimental results of the optical, physical and structural properties of the films; the results suggested that it is possible to control film growth rate and optical band gap, and consequently improve photoconductivity by proper selection of deposition parameters, optimizing dopants and appropriate annealing temperature. Our research work is in a progressive stage to realize cheap, reasonably highly efficient and environmentally friendly a-C-based photovoltaic solar cell in the future.
Keywords :
Raman spectra; X-ray photoelectron spectra; amorphous semiconductors; annealing; carbon; elemental semiconductors; energy gap; infrared spectra; iodine; nitrogen; photoconductivity; plasma CVD; scanning electron microscopy; semiconductor doping; semiconductor growth; semiconductor thin films; solar cells; ultraviolet spectra; visible spectra; C:I; C:N; Raman scattering; SEM; Si; SiO2; UV/VIS/NIR spectrophotometer; XPS measurements; alcohol mixture; amorphous carbon thin film deposition; annealing temperature; camphor; carrier gas; deposition parameters; dopants; film growth rate; methane; microwave surface-wave plasma CVD; microwave surface-wave plasma chemical vapor deposition; optical band gap; optical properties; photoconductivity; photovoltaic solar cell; physical properties; solar cell application; structural properties; Amorphous materials; Optical films; Optical scattering; Photovoltaic cells; Photovoltaic systems; Plasma applications; Plasma chemistry; Plasma temperature; Solar power generation; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488096
Filename :
1488096
Link To Document :
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