DocumentCode
3557553
Title
Crystallographic study on CdS/CdTe heterostructure for 15% efficiency thin film solar cells
Author
Matsune, Kengo ; Oda, Hiroyuki ; Ohta, Morihisa ; Toyama, Toshihiko ; Okamoto, Hiroaki
Author_Institution
Dept. of Syst. Innovation, Osaka Univ., Japan
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
239
Lastpage
242
Abstract
Crystallographic properties of CdS as well as their influence on the subsequent growth of CdTe and on the formation of the CdTe1-xSx interlayer have been investigated for fabricating high efficiency thin film solar cells, employing X-ray diffraction measurements. In hexagonal CdS films, the first preferentially oriented [002] grains are grown having a lattice match with the second preferentially oriented (103) grains. The degree of cubic (111) preferential orientation of CdTe increases with increasing the hexagonal CdS [002] grain size. Furthermore, when changes in the CdS [002] grain sizes are small, the degree of (111) preferential orientation of CdTe increases with increasing the hexagonal CdS (103) grain size, of which twice lattice spacing is considerably close to the lattice spacing of CdTe (111). So far, applying crystallographic study on the CdS/CdTe heterostructure, we have achieved the conversion efficiency of 15.3%.
Keywords
II-VI semiconductors; X-ray diffraction; cadmium compounds; grain size; lattice constants; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; solar cells; thin film devices; 15.3 percent; CdS-CdTe1-xSx-CdTe; CdS/CdTe heterostructure; CdTe growth; CdTe1-xSx interlayer formation; X-ray diffraction; conversion efficiency; crystallographic properties; cubic preferential orientation; grain size; hexagonal CdS films; lattice match; lattice spacing; preferentially oriented grains; thin film solar cells; Crystallography; Diffraction; Fabrication; Grain size; Lattices; Photovoltaic cells; Photovoltaic systems; Temperature; Transistors; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488113
Filename
1488113
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