DocumentCode :
3557555
Title :
Unusual capacitance emission transients in CIGS caused by large defect entropy changes
Author :
Young, David L. ; Ramanathan, Kannan ; Crandall, Richard S.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
259
Lastpage :
262
Abstract :
Capacitance transient data from bias-pulse experiments on CdS/CIGS solar cells show an unusual behavior at high temperatures. Above 350 K a minority carrier trap, with a larger activation energy than a majority carrier trap, emits faster than the lower activation-energy minority trap. A simple enthalpy model for trap emission cannot explain this counterintuitive behavior, but the more complete Gibbs free energy model that includes entropy can explain it. We show that entropy plays a major role in carrier emission from traps in CIGS.
Keywords :
II-VI semiconductors; cadmium compounds; capacitance; copper compounds; electron emission; electron traps; enthalpy; entropy; free energy; gallium compounds; hole traps; indium compounds; solar cells; ternary semiconductors; thin film devices; wide band gap semiconductors; CdS-Cu(InGa)Se2; CdS/CIGS solar cells; Gibbs free energy model; activation energy; bias-pulse experiments; capacitance emission transient; defect entropy changes; enthalpy model; majority carrier trap; minority carrier trap; trap emission; Capacitance; Electron traps; Energy barrier; Energy measurement; Entropy; Laboratories; Photovoltaic cells; Renewable energy resources; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488118
Filename :
1488118
Link To Document :
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