• DocumentCode
    3557560
  • Title

    Study of deep electronic states in CdTe solar cells through the detection and DLTS treatment of slow transients

  • Author

    Seymour, Fred H. ; Kaydanov, Victor ; Ohno, Tim R.

  • Author_Institution
    Colorado Sch. of Mines, Golden, CO, USA
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    275
  • Lastpage
    278
  • Abstract
    We have designed and built a temperature controlled sample stage with automated data acquisition software to detect and study thin film solar cell deep electronic states (DES) with capacitance transients (CTr) that have characteristic times ranging from seconds to hours. Our studies on thin film CdTe solar cells regularly detect DES with concentrations exceeding the doping level and with characteristic times in the tens to hundreds of seconds at room temperature. An example is given of how this high concentration of DES with slow characteristic times can provide misleading C-V profile measurements. Also described are preliminary observations of Meyer-Neldel rule behavior and DLTS analysis of CdTe cells with and without copper and CdCl2 treatment.
  • Keywords
    II-VI semiconductors; cadmium compounds; capacitance; copper; data acquisition; deep level transient spectroscopy; deep levels; sample holders; solar cells; C-V profile measurement; CdCl2; CdCl2 treatment; CdTe solar cells; CdTe:Cu; DLTS analysis; Meyer-Neldel; automated data acquisition software; capacitance transients; characteristic time; deep electronic states; doping level; slow transient DLTS treatment; slow transient detection; temperature controlled sample stage; thin film solar cell; Automatic control; Capacitance; Capacitance-voltage characteristics; Copper; Data acquisition; Doping; Photovoltaic cells; Temperature control; Temperature distribution; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488122
  • Filename
    1488122