DocumentCode :
3557564
Title :
High throughput processing of CdTe/CdS solar cells
Author :
McCandless, Brian E. ; Buchanan, Wayne A. ; Birkmire, Robert W.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
295
Lastpage :
298
Abstract :
Methods for achieving high throughput and materials yield in processing >13% efficient CdTe thin film solar cells are demonstrated, with emphasis on semiconductor deposition and post-deposition processing. Chemical surface deposition was used to deposit uniform 100 cm2 area CdS films 50 nm thick at 0.2 nm/sec, with >80% utilization of solvated Cd species. Vapor transport at 20 Torr was used to deposit dense CdTe films, 1-7 μm thick, onto CdS-coated substrates with >50% utilization in an unbaffled system. Uniform films have been deposited with translation at up to 12 cm/min and static equivalent growth rate >80 pm/min. Vapor CdCl2 post-deposition treatments yielded solar cells with AM1.5 conversion efficiency >13% for 6 μm thick CdTe and >8% for 1 μm thick CdTe.
Keywords :
II-VI semiconductors; cadmium compounds; semiconductor growth; semiconductor thin films; solar cells; solvation; vapour deposition; wide band gap semiconductors; 1 to 7 mum; 20 torr; 50 nm; CdS-coated substrate; CdTe-CdS; CdTe/CdS solar cells; Vapor CdCl2 post-deposition treatments; chemical surface deposition; conversion efficiency; film solar cells; high throughput processing; materials yield; post-deposition processing; semiconductor deposition; static equivalent growth rate; Fluid flow; Glass; Helium; Optical films; Optical saturation; Photovoltaic cells; Spraying; Substrates; Temperature; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488127
Filename :
1488127
Link To Document :
بازگشت