• DocumentCode
    3557566
  • Title

    Improved CuGaSe2-based solar cell performance by In-S surface treatments

  • Author

    Marron, D.F. ; Meede, Alexander ; Lehmann, Sebastian ; Rusu, Marin ; Schedel-Niedrig, T. ; Lux-Steiner, Martha Ch

  • Author_Institution
    Hahn-Meitner-Inst., Berlin, Germany
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    303
  • Lastpage
    306
  • Abstract
    CuGaSe2 (CGSe) thin films for photovoltaic applications have been subjected to surface treatments based on In-S by means of chemical vapor deposition. Structural and electronic characterization of as-grown films and processed devices show the effective incorporation of In and S in the near-surface region of CGSe thin films and a positive impact on the solar cell performance.
  • Keywords
    chemical vapour deposition; copper compounds; gallium compounds; indium; semiconductor thin films; solar cells; sulphur; surface treatment; ternary semiconductors; thin film devices; CuGaSe2-based solar cell; CuGaSe2:In,S; In incorporation; In-S surface treatments; S incorporation; chemical vapor deposition; near-surface region; photovoltaic applications; structural characterization and electronic characterization; thin films; Buffer layers; Chemical vapor deposition; Photovoltaic cells; Photovoltaic systems; Solar power generation; Sputtering; Surface treatment; Temperature; Thin film devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488129
  • Filename
    1488129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557566