Title :
Reach-through mechanism in CdS/CdTe solar cells
Author :
Roussillon, Y. ; Karpov, V.G. ; Shvydka, Diana ; Compaan, A.D. ; Giolando, D.M.
Author_Institution :
Toledo Univ., OH, USA
Abstract :
We describe an alternative junction mechanism in CdS/CdTe solar cells. It occurs through generation of defects in the CdS layer that changes its work function. These defects appear either by Cu doping or by modification of the TCO/CdS interface. This translates the presence of the front-contact through the CdS film and induces a Schottky barrier at the CdS/CdTe interface, similar to an MIS structure. We call this reach-though band bending. It allows high open-circuit voltage cells (above 800 mV) without any intentional copper doping.
Keywords :
II-VI semiconductors; MIS structures; Schottky barriers; band structure; cadmium compounds; copper; crystal defects; semiconductor doping; semiconductor thin films; solar cells; wide band gap semiconductors; work function; CdS layer; CdS-CdTe:Cu; CdS/CdTe interface; CdS/CdTe solar cells; Cu doping; MIS structure; Schottky barrier; TCO/CdS interface modification; alternative junction mechanism; defect generation; front-contact; open-circuit voltage cells; reach-though band bending; reach-through mechanism; work function; Chemical analysis; Copper; Doping; Electrons; P-n junctions; Photovoltaic cells; Schottky barriers; Semiconductor films; Semiconductor thin films; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488138
