Title :
Characterization of deposition parameters in aerosol assisted chemical vapor deposition of CuInS2 from a single-source precursor
Author :
McNatt, Jeremiah S. ; Dickman, John E. ; Hepp, Aloysius F. ; KeIIy, C.V. ; Jin, Michael H C ; Banger, Kulbinder K.
Author_Institution :
NASA Glenn Res. Center, Cleveland, OH, USA
Abstract :
Alloys of Cu(In:Ga)(S:Se)2 have shown high potential as thin film photovoltaic absorbers due to their high absorption coefficients, near ideal band gaps, and good electrical properties. Efforts have been lead to create easily decomposing organometallic single-source precursors (SSP) to produce films at temperatures below 400°C. Along with that, the SSP (PPh3)2Cu(SEt)2In(SEt)2 has been shown to deposit CuInS2 films with good optical, morphological, and electrical properties via aerosol-assisted chemical vapor deposition (AACVD). Presented here are studies aimed to understand how certain deposition parameters can be used to optimize the AACVD process. Parameters included in this study are temperature of the deposition zone, substrate location within the reactor, and concentration of the SSP in solution. Deposition control has produced films with four distinct morphologies, varying in density, adhesion, smoothness, and color.
Keywords :
adhesion; chemical vapour deposition; copper compounds; density; indium compounds; semiconductor growth; semiconductor thin films; surface morphology; surface roughness; ternary semiconductors; (PPh3)2Cu(SEt)2In(SEt)2; Cu(In,Ga)(S,Se)2 alloys; CuInS2; CuInS2 films; absorption coefficients; adhesion; aerosol assisted chemical vapor deposition; density; deposition parameters; deposition zone temperature; easily decomposing single-source precursors; electrical properties; film color; film morphology; ideal band gaps; morphological properties; optical properties; organometallic single-source precursors; smoothness; substrate location; thin film photovoltaic absorbers; Absorption; Aerosols; Chemical vapor deposition; Lead compounds; Optical films; Photonic band gap; Photovoltaic systems; Solar power generation; Temperature; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488147
