DocumentCode :
3557585
Title :
Investigation of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) of CIGS films and solar cells
Author :
Wang, Xuege ; Li, Sheng S. ; Craciun, V. ; Kim, W.K. ; Yoon, S. ; Howard, J.M. ; Manasreh, O. ; Venturini, J. ; Crisalle, D. ; Anderson, T.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
394
Lastpage :
397
Abstract :
Studies of the effect of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) on Cu(In,Ga)Se2 (CIGS) films and devices under various annealing conditions are reported in this paper. Several characterizations were carried out before and after each annealing. The results show that both of these two techniques could positively benefit the CIGS film properties and device performance.
Keywords :
copper compounds; gallium compounds; indium compounds; laser beam annealing; rapid thermal annealing; semiconductor thin films; solar cells; ternary semiconductors; thin film devices; CIGS film properties; CIGS solar cells; Cu(InGa)Se2; device performance; pulsed laser annealing; rapid thermal annealing; Atomic beams; Optical pulses; Photovoltaic cells; Programmable logic arrays; Rapid thermal annealing; Rapid thermal processing; Silicon; Surface emitting lasers; Surface morphology; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488152
Filename :
1488152
Link To Document :
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