DocumentCode
3557601
Title
A high-current IrO/sub x/ thin-film neuromuscular microstimulator
Author
Ziaie, B. ; Gianchandani, Y. ; Najafi, K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
1991
fDate
24-27 June 1991
Firstpage
124
Lastpage
127
Abstract
The authors report the development of a high-current stimulating electrode and a versatile fabrication technology required for the eventual realization of an implantable microstimulator for neuromuscular applications. The stimulating electrode is based on thin films of activated iridium oxide (AIROF), and is formed by combining more than 450, 20 mu m*20 mu m, small AIROF sites. It occupies a total active area of approximately=180000 mu m/sup 2/ and has been subjected to more than 350 million charge-balanced constant current pulses of 10 mA amplitude and 200- mu s duration without showing any sign of degradation. A versatile fabrication technology has been developed which offers high-performance CMOS and bipolar devices, together with Zener diodes, on-chip poly-Si/poly-Si capacitors, and high-value resistors. Isolated vertical npn transistors with current gains of 140-150, lateral pnp transistors with current gains of 10-20, and 7-V voltage references are available and have been used to implement an integrated circuit chip for an implantable neuromuscular microstimulator. The chip includes 3.5-V and 8-V regulators, RC low-pass and high-pass filters, and regulated current sources and sinks, and measures 1.9*1.2 mm/sup 2/.<>
Keywords
biomedical electronics; electrodes; muscle; neurophysiology; prosthetics; 10 mA; 200 mus; 3.5 to 8 V; CMOS devices; IrO/sub x/; Zener diodes; active area; bipolar devices; charge-balanced constant current pulses; current gains; current sinks; high-current stimulating electrode; high-pass filters; high-value resistors; implantable microstimulator; integrated circuit chip; lateral pnp transistors; low-pass filters; regulated current sources; thin-film neuromuscular microstimulator; versatile fabrication technology; vertical npn transistors; voltage references; CMOS technology; Capacitors; Degradation; Diodes; Electrodes; Fabrication; Isolation technology; Neuromuscular; Resistors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-87942-585-7
Type
conf
DOI
10.1109/SENSOR.1991.148817
Filename
148817
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