DocumentCode :
3557620
Title :
Radiation response mechanisms in multijunction III-V space solar cells
Author :
Walters, Robert J. ; Warner, Jeffrey H. ; Summers, Geoffrey P. ; Messenger, Scott R. ; Lorentzen, Justin R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
542
Lastpage :
547
Abstract :
The radiation response mechanisms operative in multijunction (MJ) III-V space solar cells are described. The effects of electron and proton radiation-induced defects on the cell performance are identified, and a detailed description of the MJ solar cell radiation response is presented for several different stoichiometries. Special attention is paid to the case of low energy proton irradiation for both unidirectional, monoenergetic laboratory experiments and omni-directional, spectrum irradiation experienced in a space environment.
Keywords :
III-V semiconductors; aerospace instrumentation; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; proton effects; radiation hardening (electronics); semiconductor heterojunctions; solar cells; stoichiometry; InxGa1-xP-InyGa1-yAs-Ge; cell performance; electron radiation-induced defects; low energy proton irradiation; multijunction III-V space solar cells; omni-directional spectrum irradiation; proton radiation-induced defects; radiation response mechanisms; space environment; stoichiometry; unidirectional monoenergetic laboratory experiments; Degradation; Electrons; III-V semiconductor materials; Laboratories; Lighting; Photonic band gap; Photovoltaic cells; Protons; Space technology; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488188
Filename :
1488188
Link To Document :
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