مرکز منطقه ای اطلاع رساني علوم و فناوري - Microstructural and Chemical Investigation of PVD-CdS/PVD-<inline-formula> <img src="/images/tex/21783.gif" alt="\\hbox {CuIn}_{\\hbox {1-x}} {\\hbox {Ga}}_{\\hbox {x}} {\\hbox {Se}}_{\\hbox {2}}"> </inline-formula> Heterojunctions: A Transmission Electro

DocumentCode :

35580

Title :

Microstructural and Chemical Investigation of PVD-CdS/PVD- $\\hbox {CuIn}_{\\hbox {1-x}} {\\hbox {Ga}}_{\\hbox {x}} {\\hbox {Se}}_{\\hbox {2}}$ Heterojunctions: A Transmission Electro

Author :

He, X.Q. ; Brown, G. ; Demirkan, K. ; Mackie, N. ; Lordi, V. ; Rockett, A.

Author_Institution :

Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

Volume :

Issue :

fYear :

2014

fDate :

Nov. 2014

Firstpage :

1625

Lastpage :

1629

Abstract :

We report on a detailed transmission electron microscopy (TEM) study of physical-vapor-deposited (PVD) CdS /CuIn_1-xGa_xSe₂ (CIGS) heterojunctions prepared at the Mia-Soléproduction line. High-resolution TEM images of the heterointerface reveal the coexistence of CdS domains of cubic and hexagonal phases. Both are shown to grow epitaxially on the CIGS surface. Twin boundaries in the CIGS were observed to propagate into the epitaxial CdS and continue through the whole CdS layer. Scanning TEM in combination with energy dispersive X-ray spectroscopy shows the presence of Cu in the CdS up to -20 nm from the heterojunction. These results provide insights into the PVD-CdS/CIGS heterointerface and suggest that buffer layer crystallinity sufficient to produce photocurrent generation may be obtained with further process optimization.

Keywords :

II-VI semiconductors; X-ray chemical analysis; buffer layers; cadmium compounds; copper compounds; crystal structure; gallium compounds; indium compounds; semiconductor heterojunctions; semiconductor thin films; solar cells; ternary semiconductors; transmission electron microscopy; twin boundaries; vapour deposition; CdS-CIGS heterojunctions; CdS-CuIn_1-xGa_xSe₂; Mia-Sole production line; buffer layer crystallinity; cubic phase; energy dispersive X-ray spectroscopy; hexagonal phase; photocurrent generation; physical-vapor-deposition; transmission electron microscopy; twin boundaries; Epitaxial growth; Grain boundaries; Heterojunctions; Photovoltaic cells; Semiconductor materials; Sputtering; Transmission electron microscopy; Cu(In; Cu(In, Ga)Se2 photovoltaics; Ga)Se2 photovoltaics; PVD-CdS structure; transmission electron microscopy; twins;

fLanguage :

English

Journal_Title :

Photovoltaics, IEEE Journal of

Publisher :

ieee

ISSN :

2156-3381

Type :

jour

DOI :

10.1109/JPHOTOV.2014.2344752

Filename :

6880380

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=35580