Current gain in bipolar transistors with a field plate over the base surface

Vertical n-p-n and lateral p-n-p transistor structures of an integrated circuit are studied using an electrolytic tank analogue and it is shown that the presence of a proper field plate extending from the collector-base junction over most of the base surface will improve the current-gain factor considerably. Experimental results of the analogue study, simulating typical carrier lifetimes and typical overall dimensions, are presented with various geometrical dimensions as parameters.